Semiconductor device and method of forming conductive posts embedded in photosensitive encapsulant

ABSTRACT

A semiconductor package includes a post carrier having a base plate and plurality of conductive posts. A photosensitive encapsulant is deposited over the base plate of the post carrier and around the conductive posts. The photosensitive encapsulant is etched to expose a portion of the base plate of the post carrier. A semiconductor die is mounted to the base plate of the post carrier within the etched portions of the photosensitive encapsulant. A second encapsulant is deposited over the semiconductor die. A first circuit build-up layer is formed over the second encapsulant. The first circuit build-up layer is electrically connected to the conductive posts. The base plate of the post carrier is removed and a second circuit build-up layer is formed over the semiconductor die and the photosensitive encapsulant opposite the first circuit build-up layer. The second circuit build-up layer is electrically connected to the conductive posts.

CLAIM TO DOMESTIC PRIORITY

The present application is a continuation of U.S. application Ser. No.12/329,430, now U.S. Pat. No. 8,354,304, filed Dec. 5, 2008, whichapplication is incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor devices and,more particularly, to a semiconductor package having conductive postsembedded in a structurally protective encapsulant.

BACKGROUND OF THE INVENTION

Semiconductor devices are commonly found in modern electronic products.Semiconductor devices vary in the number and density of electricalcomponents. Discrete semiconductor devices generally contain one type ofelectrical component, e.g., light emitting diode (LED), transistor,resistor, capacitor, inductor, and power metal oxide semiconductor fieldeffect transistor (MOSFET). Integrated semiconductor devices typicallycontain hundreds to millions of electrical components. Examples ofintegrated semiconductor devices include microcontrollers,microprocessors, charged-coupled devices (CCDs), solar cells, anddigital micro-mirror devices (DMDs).

Semiconductor devices perform a wide range of functions such ashigh-speed calculations, transmitting and receiving electromagneticsignals, controlling electronic devices, transforming sunlight toelectricity, and creating visual projections for television displays.Semiconductor devices are found in the fields of entertainment,communications, power generation, networks, computers, and consumerproducts. Semiconductor devices are also found in electronic productsincluding military, aviation, automotive, industrial controllers, andoffice equipment.

Semiconductor devices exploit the electrical properties of semiconductormaterials. The atomic structure of semiconductor material allows itselectrical conductivity to be manipulated by the application of anelectric field or through the process of doping. Doping introducesimpurities into the semiconductor material to manipulate and control theconductivity of the semiconductor device.

A semiconductor device contains active and passive electricalstructures. Active structures, including transistors, control the flowof electrical current. By varying levels of doping and application of anelectric field, the transistor either promotes or restricts the flow ofelectrical current. Passive structures, including resistors, diodes, andinductors, create a relationship between voltage and current necessaryto perform a variety of electrical functions. The passive and activestructures are electrically connected to form logic circuits, whichenable the semiconductor device to perform high-speed calculations andother useful functions.

Semiconductor devices are generally manufactured using two complexmanufacturing processes, i.e., front-end manufacturing, and back-endmanufacturing, each involving potentially hundreds of steps. Front-endmanufacturing involves the formation of a plurality of die on thesurface of a semiconductor wafer. Each die is typically identical andcontains circuits formed by electrically connecting active and passivecomponents. Back-end manufacturing involves singulating individual diefrom the finished wafer and packaging the die to provide structuralsupport and environmental isolation.

One goal of semiconductor manufacturing is to produce smallersemiconductor devices. Smaller devices typically consume less power,have higher performance, and can be produced more efficiently. Inaddition, smaller semiconductor devices have a smaller footprint, whichis desirable for smaller end products. A smaller die size may beachieved by improvements in the front-end process resulting in die withsmaller, higher density active and passive components. Back-endprocesses may result in semiconductor device packages with a smallerfootprint by improvements in electrical interconnection and packagingmaterials.

In many applications, it is desirable to stack wafer level chip scalesemiconductor packages for a higher level of circuit integration. Inwafer level fan-out chip scale semiconductor packages, z-directionelectrical interconnections have been provided to facilitate theelectrical interconnect between the stacked packages. The z-directionelectrical interconnects are typically formed by metal plating. Theplating process is time-consuming and adds manufacturing cost andcomplexity. Alternatively, the z-direction electrical interconnects canbe formed by mechanical conductive bonding. However, the high aspectratio of the z-direction electrical interconnects makes handlingdifficult leading to defects and reduced manufacturing yield.

SUMMARY OF THE INVENTION

In one embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a substrateincluding a plurality of conductive posts extending from the substrate,disposing a photosensitive material over the substrate and around theconductive posts, forming an opening in the photosensitive material toexpose a portion of the substrate between the conductive posts,disposing a semiconductor die over the substrate within the opening inthe photosensitive material, and depositing an encapsulant over thesemiconductor die within the opening in the photosensitive material.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a substrateincluding a plurality of conductive posts, disposing a photosensitivematerial over the substrate and around the conductive posts, forming anopening in the photosensitive material between the conductive posts, anddisposing a semiconductor die over the substrate within the opening inthe photosensitive material.

In another embodiment, the present invention is a method of making asemiconductor device comprising the steps of providing a plurality ofconductive posts, disposing a photosensitive material around theconductive posts, forming an opening in the photosensitive materialbetween the conductive posts, and disposing a semiconductor die withinthe opening in the photosensitive material.

In another embodiment, the present invention is a semiconductor devicecomprising a plurality of conductive posts and photosensitive materialdisposed around the conductive posts with an opening formed in thephotosensitive material between the conductive posts. A semiconductordie is disposed within the opening in the photosensitive material.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a printed circuit board (PCB) with different types ofpackages mounted to its surface;

FIGS. 2 a-2 c illustrate further detail of the representativesemiconductor packages mounted to the PCB;

FIGS. 3 a-3 f illustrate a process of forming a wafer level fan-out chipscale semiconductor package using a photosensitive encapsulant tostructurally support and protect z-direction conductive posts duringfabrication; and

FIGS. 4 a-4 g illustrate a process of forming a wafer level fan-out chipscale semiconductor package using a photosensitive encapsulant tostructurally support and protect z-direction conductive posts duringfabrication, the device is planarized to expose a top surface of thedies.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the Figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, it will be appreciated by those skilled in the art that itis intended to cover alternatives, modifications, and equivalents as maybe included within the spirit and scope of the invention as defined bythe appended claims and their equivalents as supported by the followingdisclosure and drawings.

Semiconductor devices are generally manufactured using two complexmanufacturing processes: front-end manufacturing and back-endmanufacturing. Front-end manufacturing involves the formation of aplurality of die on the surface of a semiconductor wafer. Each die onthe wafer contains active and passive electrical components which areelectrically connected to form functional electrical circuits. Activeelectrical components, such as transistors, have the ability to controlthe flow of electrical current. Passive electrical components, such ascapacitors, inductors, resistors, and transformers, create arelationship between voltage and current necessary to perform electricalcircuit functions.

Passive and active components are formed on the surface of thesemiconductor wafer by a series of process steps including doping,deposition, photolithography, etching, and planarization. Dopingintroduces impurities into the semiconductor material by techniques suchas ion implantation or thermal diffusion. The doping process modifiesthe electrical conductivity of semiconductor material in active devices,transforming the semiconductor material into a permanent insulator,permanent conductor, or changing the way the semiconductor materialchanges in conductivity in response to an electric field. Transistorscontain regions of varying types and degrees of doping arranged asnecessary to enable the transistor to promote or restrict the flow ofelectrical current upon the application of an electric field.

Active and passive components are formed by layers of materials withdifferent electrical properties. The layers can be formed by a varietyof deposition techniques determined in part by the type of materialbeing deposited. For example, thin film deposition may involve chemicalvapor deposition (CVD), physical vapor deposition (PVD), electrolyticplating, and electroless plating processes. Each layer is generallypatterned to form portions of active components, passive components, orelectrical connections between components.

The layers can be patterned using photolithography, which involves thedeposition of light sensitive material, e.g., photoresist, over thelayer to be patterned. A pattern is transferred from a photomask to thephotoresist using light. The portion of the photoresist patternsubjected to light is removed using a solvent, exposing portions of theunderlying layer to be patterned. The remainder of the photoresist isremoved, leaving behind a patterned layer. Alternatively, some types ofmaterials are patterned by directly depositing the material into theareas or voids formed by a previous deposition/etch process usingtechniques such as electroless and electrolytic plating.

Depositing a thin film of material over an existing pattern canexaggerate the underlying pattern and create a non-uniformly flatsurface. A uniformly flat surface is required to produce smaller andmore densely packed active and passive components. Planarization can beused to remove material from the surface of the wafer and produce auniformly flat surface. Planarization involves polishing the surface ofthe wafer with a polishing pad. An abrasive material and corrosivechemical are added to the surface of the wafer during polishing. Thecombined mechanical action of the abrasive and corrosive action of thechemical removes any irregular topography, resulting in a uniformly flatsurface.

Back-end manufacturing refers to cutting or singulating the finishedwafer into the individual die and then packaging the die for structuralsupport and environmental isolation. To singulate the die, the wafer isscored and broken along non-functional regions of the wafer called sawstreets or scribes. The wafer is singulated using a laser cutting deviceor saw blade. After singulation, the individual die are mounted to apackage substrate that includes pins or contact pads for interconnectionwith other system components. Contact pads formed over the semiconductordie are then connected to contact pads within the package. Theelectrical connections can be made with solder bumps, stud bumps,conductive paste, or wirebonds. An encapsulant or other molding materialis deposited over the package to provide physical support and electricalisolation. The finished package is then inserted into an electricalsystem and the functionality of the semiconductor device is madeavailable to the other system components.

FIG. 1 illustrates electronic device 10 having a chip carrier substrateor printed circuit board (PCB) 12 with a plurality of semiconductorpackages mounted on its surface. Electronic device 10 may have one typeof semiconductor package, or multiple types of semiconductor packages,depending on the application. The different types of semiconductorpackages are shown in FIG. 1 for purposes of illustration.

Electronic device 10 may be a stand-alone system that uses thesemiconductor packages to perform an electrical function. Alternatively,electronic device 10 may be a subcomponent of a larger system. Forexample, electronic device 10 may be a graphics card, network interfacecard, or other signal processing card that can be inserted into acomputer. The semiconductor package can include microprocessors,memories, application specific integrated circuits (ASICs), logiccircuits, analog circuits, RF circuits, discrete devices, or othersemiconductor die or electrical components.

In FIG. 1, PCB 12 provides a general substrate for structural supportand electrical interconnect of the semiconductor packages mounted on thePCB. Conductive signal traces 14 are formed on a surface or withinlayers of PCB 12 using evaporation, electrolytic plating, electrolessplating, screen printing, PVD, or other suitable metal depositionprocess. Signal traces 14 provide for electrical communication betweeneach of the semiconductor packages, mounted components, and otherexternal system components. Traces 14 also provide power and groundconnections to each of the semiconductor packages.

In some embodiments, a semiconductor device has two packaging levels.First level packaging is the technique for mechanically and electricallyattaching the semiconductor die to a carrier. Second level packaginginvolves mechanically and electrically attaching the carrier to the PCB.In other embodiments, a semiconductor device may only have the firstlevel packaging where the die is mechanically and electrically mounteddirectly to the PCB.

For the purpose of illustration, several types of first level packaging,including wire bond package 16 and flip chip 18, are shown on PCB 12.Additionally, several types of second level packaging, including ballgrid array (BGA) 20, bump chip carrier (BCC) 22, dual in-line package(DIP) 24, land grid array (LGA) 26, multi-chip module (MCM) 28, quadflat non-leaded package (QFN) 30, and quad flat package 32, are shownmounted on PCB 12. Depending upon the system requirements, anycombination of semiconductor packages, configured with any combinationof first and second level packaging styles, as well as other electroniccomponents, can be connected to PCB 12. In some embodiments, electronicdevice 10 includes a single attached semiconductor package, while otherembodiments call for multiple interconnected packages. By combining oneor more semiconductor packages over a single substrate, manufacturerscan incorporate pre-made components into electronic devices and systems.Because the semiconductor packages include sophisticated functionality,electronic devices can be manufactured using cheaper components and ashorter manufacturing process. The resulting devices are less likely tofail and less expensive to manufacture resulting in lower costs forconsumers.

FIG. 2 a illustrates further detail of DIP 24 mounted on PCB 12. DIP 24includes semiconductor die 34 having contact pads 36. Semiconductor die34 includes an active area containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within semiconductor die 34 and areelectrically interconnected according to the electrical design of thedie. For example, the circuit may include one or more transistors,diodes, inductors, capacitors, resistors, and other circuit elementsformed within the active area of die 34. Contact pads 36 are made with aconductive material, such as aluminum (Al), copper (Cu), tin (Sn),nickel (Ni), gold (Au), or silver (Ag), and are electrically connectedto the circuit elements formed within die 34. Contact pads 36 are formedby PVD, CVD, electrolytic plating, or electroless plating process.During assembly of DIP 24, semiconductor die 34 is mounted to a carrier38 using a gold-silicon eutectic layer or adhesive material such asthermal epoxy. The package body includes an insulative packagingmaterial such as polymer or ceramic. Conductor leads 40 are connected tocarrier 38 and wire bonds 42 are formed between leads 40 and contactpads 36 of die 34 as a first level packaging. Encapsulant 44 isdeposited over the package for environmental protection by preventingmoisture and particles from entering the package and contaminating die34, contact pads 36, or wire bonds 42. DIP 24 is connected to PCB 12 byinserting leads 40 into holes formed through PCB 12. Solder material 46is flowed around leads 40 and into the holes to physically andelectrically connect DIP 24 to PCB 12. Solder material 46 can be anymetal or electrically conductive material, e.g., Sn, lead (Pb), Au, Ag,Cu, zinc (Zn), bismuthinite (Bi), and alloys thereof, with an optionalflux material. For example, the solder material can be eutectic Sn/Pb,high-lead, or lead-free.

FIG. 2 b illustrates further detail of BCC 22 mounted on PCB 12.Semiconductor die 47 is connected to a carrier by wire bond style firstlevel packaging. BCC 22 is mounted to PCB 12 with a BCC style secondlevel packaging. Semiconductor die 47 having contact pads 48 is mountedover a carrier using an underfill or epoxy-resin adhesive material 50.Semiconductor die 47 includes an active area containing analog ordigital circuits implemented as active devices, passive devices,conductive layers, and dielectric layers formed within semiconductor die47 and are electrically interconnected according to the electricaldesign of the die. For example, the circuit may include one or moretransistors, diodes, inductors, capacitors, resistors, and other circuitelements formed within the active area of die 47. Contact pads 48 aremade with a conductive material, such as Al, Cu, Sn, Ni, Au, or Ag, andare electrically connected to the circuit elements formed within die 47.Contact pads 48 are formed by PVD, CVD, electrolytic plating, orelectroless plating process. Wire bonds 54 and bond pads 56 and 58electrically connect contact pads 48 of semiconductor die 47 to contactpads 52 of BCC 22 forming the first level packaging. Molding compound orencapsulant 60 is deposited over semiconductor die 47, wire bonds 54,contact pads 48, and contact pads 52 to provide physical support andelectrical isolation for the device. Contact pads 64 are formed on asurface of PCB 12 using evaporation, electrolytic plating, electrolessplating, screen printing, PVD, or other suitable metal depositionprocess and are typically plated to prevent oxidation. Contact pads 64electrically connect to one or more conductive signal traces 14. Soldermaterial is deposited between contact pads 52 of BCC 22 and contact pads64 of PCB 12. The solder material is reflowed to form bumps 66 whichform a mechanical and electrical connection between BCC 22 and PCB 12.

In FIG. 2 c, semiconductor die 18 is mounted face down to carrier 76with a flip chip style first level packaging. BGA 20 is attached to PCB12 with a BGA style second level packaging. Active area 70 containinganalog or digital circuits implemented as active devices, passivedevices, conductive layers, and dielectric layers formed withinsemiconductor die 18 is electrically interconnected according to theelectrical design of the die. For example, the circuit may include oneor more transistors, diodes, inductors, capacitors, resistors, and othercircuit elements formed within active area 70 of semiconductor die 18.Semiconductor die 18 is electrically and mechanically attached tocarrier 76 through a large number of individual conductive solder bumpsor balls 78. Solder bumps 78 are formed on bump pads or interconnectsites 80, which are disposed on active areas 70. Bump pads 80 are madewith a conductive material, such as Al, Cu, Sn, Ni, Au, or Ag, and areelectrically connected to the circuit elements formed in active area 70.Bump pads 80 are formed by PVD, CVD, electrolytic plating, orelectroless plating process. Solder bumps 78 are electrically andmechanically connected to contact pads or interconnect sites 82 oncarrier 76 by a solder reflow process.

BGA 20 is electrically and mechanically attached to PCB 12 by a largenumber of individual conductive solder bumps or balls 86. The solderbumps are formed on bump pads or interconnect sites 84. The bump pads 84are electrically connected to interconnect sites 82 through conductivelines 90 routed through carrier 76. Contact pads 88 are formed on asurface of PCB 12 using evaporation, electrolytic plating, electrolessplating, screen printing, PVD, or other suitable metal depositionprocess and are typically plated to prevent oxidation. Contact pads 88electrically connect to one or more conductive signal traces 14. Thesolder bumps 86 are electrically and mechanically connected to contactpads or bonding pads 88 on PCB 12 by a solder reflow process. Moldingcompound or encapsulant 92 is deposited over semiconductor die 18 andcarrier 76 to provide physical support and electrical isolation for thedevice. The flip chip semiconductor device provides a short electricalconduction path from the active devices on semiconductor die 18 toconduction tracks on PCB 12 in order to reduce signal propagationdistance, lower capacitance, and achieve overall better circuitperformance. In another embodiment, the semiconductor die 18 can bemechanically and electrically attached directly to PCB 12 using flipchip style first level packaging without carrier 76.

FIGS. 3 a-3 f illustrate a process of forming wafer level fan-out chipscale semiconductor package 100 using a photosensitive encapsulant tostructurally support and protect z-direction conductive posts duringfabrication. FIG. 3 a shows a cross-sectional view of a prefabricatedpost carrier 102 with conductive posts 104 oriented in the z-directionor perpendicular with respect to the base plate of post carrier 102.Post carrier 102 and conductive posts 104 are typically Cu but can alsobe aluminum (Al) and Cu or Al alloys. Conductive posts 104 are round orsquare in cross-section and arranged in a rectangular array, such as astrip form, but can also be in the form of a wafer and include alternatecross-section shapes. Photosensitive encapsulant 106 is deposited overpost carrier 102 and conductive posts 104. Photosensitive encapsulant106 includes benzocyclobutene (BCB), polymethylmethacrylate (PMMA),polyimide (PI) or other photosensitive encapsulating materials.

Turning to FIG. 3 b, cavities 108 are formed in photosensitiveencapsulant 106. Cavities 108 may be formed using photolithography or anexposure and development process, as discussed above. As shown on FIG. 3b, cavities 108 expose portions of the base portion of post carrier 102.ICs or dies 110 are mounted within cavities 108 of photosensitiveencapsulant 106 to post carrier 102. Dies 110 include contact pads orelectrodes 112. Contact pads 112 include a conductive material and maybe formed by PVD, CVD, electrolytic plating, or electroless platingprocesses. Optional wetting pads may be formed on a surface of postcarrier 102 using plating or PVD to enhance the bond between dies 110and post carrier 102.

As shown in FIG. 3 c, encapsulant 114 is deposited over post carrier 102and dies 110 using spin coating, screen printing, or top dispensing. Inone embodiment, encapsulant 114 includes a molding compound depositedover post carrier 102 using a compressive molding, transfer molding,liquid encapsulant molding, liquid dispensing, or other suitableapplicator. The encapsulant can include liquid epoxy, powder, epoxyresin, epoxy acrylate, polymer, or polymer composite material. Afterdeposition, encapsulant 114 is planarized using chemical etching,mechanical grinding, or a combination of planarization or etchingprocesses. After planarization, a top portion of conductive posts 104 isexposed. Depending upon the application, after planarization ofencapsulant 114, a top surface of both conductive posts 104 and dies 110may be exposed.

Turning to FIG. 3 d, an electrical network or circuit is formed over atop surface of device 100. The circuit may include redistribution layers(RDLs), thin film devices (including integrated passive or activedevices) and electrical interconnects (including external devicecontacts). With reference to FIG. 3 d, the electrical circuit includesconductive layers 116 and 120, and insulating layers 118 and 122.Conductive layers 116 and 120 can be Al, Cu, Sn, Ni, Au, Ag, or othersuitable electrically conductive material. Conductive layers 116 and 120are formed by PVD, CVD, electrolytic plating, or electroless platingprocesses. Conductive layers 116 and 120 are electrically connected byconductive vias 124. Conductive layer 116 electrically connects toconductive posts 104. Conductive layer 120 can be RDLs or externalcontact pads. The insulating layers 118 and 122 can be silicon dioxide(SiO2), silicon nitride (Si3N4), silicon oxynitride (SiON), tantalumpentoxide (Ta2O5), zircon (ZrO2), aluminum oxide (Al2O3), or othermaterial having suitable insulating properties. The deposition ofinsulating layers may involve PVD, CVD, printing, sintering, or thermaloxidation. The insulating layers may include single or multiple layersor electrically insulative material. The circuit formed over device 100may include thin film semiconductor devices, such as active devices orintegrated passive devices (IPDs), such as inductors, resistors, andcapacitors. The thin film semiconductor circuit elements provide in partthe necessary functionality of the semiconductor device.

Turning to FIG. 3 e, post carrier 102 is patterned to remove the bottomportion of post carrier 102 and expose a bottom surface of conductiveposts 104 and contact pads 112 of dies 110. A second electrical networkor circuit is formed over the bottom surface of device 100. The circuitmay include RDLs, thin film devices (including integrated passive oractive devices) and electrical interconnects (including external devicecontacts). The bottom-surface circuit includes conductive layers 126 and130 and insulating layers 128 and 132. Conductive layers 126 and 130 canbe Al, Cu, Sn, Ni, Au, Ag, or other suitable electrically conductivematerial. Conductive layers 126 and 130 are formed by PVD, CVD,electrolytic plating, or electroless plating processes. Conductivelayers 126 and 130 are electrically connected by conductive via 134.Conductive layer 126 electrically connects to conductive posts 104.Conductive layer 130 can be RDLs or external contact pads. Theinsulating layers 128 and 132 can be SiO2, Si3N4, SiON, Ta2O5, ZrO2,Al2O3, or other material having suitable insulating properties. Thedeposition of the insulating layers may involve PVD, CVD, printing,sintering, or thermal oxidation. The insulating layers can includesingle or multiple layers of electrically insulative material. Thebottom-surface circuit may further include thin film semiconductordevices, such as active devices or IPDs, such as inductors, resistors,and capacitors. The thin film semiconductor circuit elements provide inpart the necessary functionality of the semiconductor device.

Turning to FIG. 3 f, device 100 is singulated and an electricalinterconnect structure is mounted to a bottom surface of device 100 andelectrically connected to conductive layer 130. With reference to FIG. 3f, an electrically conductive solder material is deposited overconductive layer 130 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The soldermaterial can be any metal or electrically conductive material, e.g., Sn,Ni, Au, Ag, Pb, Bi, and alloys thereof, with an optional flux material.For example, the solder material can be eutectic Sn/Pb, high lead, orlead free. The solder material is reflowed by heating the material aboveits melting point to form spherical balls or bumps 136. In someapplications, solder bumps 136 are reflowed a second time to improveelectrical contact to conductive layer 130. Solder bumps 136 representone type of interconnect structure that can be formed on conductivelayer 130. The interconnect structure can also use bond wires, 3Dinterconnects, conductive paste, or other electrical interconnect. Thedevices are singulated with a saw blade or laser cutting tool intoindividual wafer level chip scale semiconductor packages. Optionalelectrical interconnect structure may also be connected to a top surfaceof device 100, for example by forming conductive solder balls in contactwith conductive layer 120.

FIGS. 4 a-4 g illustrate a process of forming wafer level fan-out chipscale semiconductor package 200 using a photosensitive encapsulant tostructurally support and protect z-direction conductive posts duringfabrication, the device is planarized to expose a top surface of thedies. FIG. 4 a shows a cross-sectional view of a prefabricated postcarrier 202 with conductive posts 204 oriented in the z-direction orperpendicular with respect to the base plate of post carrier 202.Conductive posts 204 are round or square in cross-section and arrangedin a rectangular array, such as a strip form, but can also be in theform of a wafer and include alternate cross-section shapes.Photosensitive encapsulant 206 is deposited over post carrier 202 andconductive posts 204. Photosensitive encapsulant 206 includes BCB, PMMA,PI or other photosensitive encapsulating materials.

Turning to FIG. 4 b, cavities 208 are formed in photosensitiveencapsulant 206. Cavities 208 may be formed using photolithography, asdiscussed above. As shown on FIG. 4 b, cavities 208 expose portions ofthe base portion of post carrier 202. ICs or dies 210 are mounted withincavities 208 of photosensitive encapsulant 206 to post carrier 202. Dies210 include contact pads or electrodes 212. Contact pads 212 include aconductive material and may be formed by PVD, CVD, electrolytic plating,or electroless plating processes. Optional wetting pads may be formed ona surface of post carrier 202 using plating or PVD to enhance the bondbetween dies 210 and post carrier 202.

As shown in FIG. 4 c, encapsulant 214 is deposited over post carrier 202and dies 210 using spin coating, screen printing, or top dispensing. Inone embodiment, encapsulant 214 includes a molding compound depositedover post carrier 202 using a compressive molding, transfer molding,liquid encapsulant molding, liquid dispensing, or other suitableapplicator. The encapsulant can include liquid epoxy, powder, epoxyresin, epoxy acrylate, polymer, or polymer composite material.

Turning to FIG. 4 d, after deposition of encapsulant 214, encapsulant214 is planarized using chemical etching, mechanical grinding, or acombination or planarization or etching processes. After planarization,a top portion of conductive posts 204 and dies 210 are exposed.

Turning to FIG. 4 e, an electrical network or circuit is formed over atop surface of device 200. The circuit may include RDLs, thin filmdevices (including integrated passive or active devices) and electricalinterconnects (including external device contacts). With reference toFIG. 4 e, the electrical circuit includes conductive layers 216 and 220,and insulating layers 218 and 222. Conductive layers 216 and 220 can beAl, Cu, Sn, Ni, Au, Ag, or other suitable electrically conductivematerial. Conductive layers 216 and 220 are formed by PVD, CVD,electrolytic plating, or electroless plating processes. Conductivelayers 216 and 220 are electrically connected by conductive via 224.Conductive layer 216 electrically connects to conductive posts 204.Conductive layer 220 can be RDLs or external contact pads. Theinsulating layers 218 and 222 can be SiO2, Si3N4, SiON, Ta2O5, ZrO2,Al2O3, or other material having suitable insulating properties. Thedeposition of insulating layers may involve PVD, CVD, printing,sintering, or thermal oxidation. The insulating layers may includesingle or multiple layers or electrically insulative material. Thecircuit formed over device 200 may include thin film semiconductordevices, such as active devices or IPDs, such as inductors, resistors,and capacitors. The thin film semiconductor circuit elements provide inpart the necessary functionality of the semiconductor device.

Turning to FIG. 4 f, post carrier 202 is patterned to remove the bottomportion of post carrier 202 and to expose a bottom surface of conductiveposts 204 and contact pads 212 of dies 210. A second electrical networkor circuit is formed over the bottom surface of device 200. The circuitmay include RDLs, thin film devices (including integrated passive oractive devices) and electrical interconnects (including external devicecontacts). The bottom-surface circuit includes conductive layers 226 and230 and insulating layers 228 and 232. Conductive layers 226 and 230 canbe Al, Cu, Sn, Ni, Au, Ag, or other suitable electrically conductivematerial. Conductive layers 226 and 230 are formed by PVD, CVD,electrolytic plating, or electroless plating processes. Conductivelayers 226 and 230 are electrically connected by conductive vias 234.Conductive layer 226 electrically connects to conductive posts 204.Conductive layer 230 can be RDLs or external contact pads. Theinsulating layers 228 and 232 can be SiO2, Si3N4, SiON, Ta2O5, ZrO2,Al2O3, or other material having suitable insulating properties. Thedeposition of the insulating layers may involve PVD, CVD, printing,sintering, or thermal oxidation. The insulating layers can includesingle or multiple layers of electrically insulative material. Thebottom-surface circuit may further include thin film semiconductordevices, such as active devices or IPDs, such as inductors, resistors,and capacitors. The thin film semiconductor circuit elements provide inpart the necessary functionality of the semiconductor device.

Turning to FIG. 4 g, device 200 is singulated and an electricalinterconnect structure is mounted to a bottom surface of device 200 andelectrically connected to conductive layer 230. With reference to FIG. 4g, an electrically conductive solder material is deposited overconductive layer 230 using an evaporation, electrolytic plating,electroless plating, ball drop, or screen printing process. The soldermaterial can be any metal or electrically conductive material, e.g., Sn,Ni, Au, Ag, Pb, Bi, and alloys thereof, with an optional flux material.For example, the solder material can be eutectic Sn/Pb, high lead, orlead free. The solder material is reflowed by heating the material aboveits melting point to form spherical balls or bumps 236. In someapplications, solder bumps 236 are reflowed a second time to improveelectrical contact to conductive layer 230. Solder bumps 236 representone type of interconnect structure that can be formed on conductivelayer 230. The interconnect structure can also use bond wires, 3Dinterconnects, conductive paste, or other electrical interconnect. Thedevices are singulated with a saw blade or laser cutting tool intoindividual wafer level chip scale semiconductor packages. Optionalelectrical interconnect structures may also be connected to a topsurface of device 200, for example by forming conductive solder balls incontact with conductive layer 220.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

What is claimed:
 1. A method of making a semiconductor device,comprising: providing a prefabricated substrate including a base plateand a plurality of conductive posts extending from the base plate;disposing a photosensitive material over the base plate and around theconductive posts; forming an opening in a first surface of thephotosensitive material between the conductive posts; and disposing asemiconductor die within the opening in the photosensitive material overthe base plate of the prefabricated substrate.
 2. The method of claim 1,further including depositing an encapsulant over the semiconductor diewithin the opening in the photosensitive material.
 3. The method ofclaim 1, further including forming a first interconnect structure overthe first surface of the photosensitive material.
 4. The method of claim3, further including: removing the base plate; and forming a secondinterconnect structure over a second surface of the photosensitivematerial opposite the first surface of the photosensitive material. 5.The method of claim 1, further including planarizing the photosensitivematerial to the semiconductor die.
 6. The method of claim 1, wherein thephotosensitive material extends above the conductive posts.
 7. A methodof making a semiconductor device, comprising: providing a coppersubstrate including a base plate and a plurality of conductive postsextending from the base plate; disposing a first encapsulant over thebase plate and around the conductive posts; forming an opening in asurface of the first encapsulant between the conductive posts; anddisposing a semiconductor die within the opening in the firstencapsulant over the base plate of the copper substrate.
 8. The methodof claim 7, further including depositing a second encapsulant over thesemiconductor die within the opening in the first encapsulant.
 9. Themethod of claim 7, further including forming a first interconnectstructure over a first surface of the semiconductor die.
 10. The methodof claim 9, further including: removing the base plate; and forming asecond interconnect structure over a second surface of the semiconductordie opposite the first surface of the semiconductor die.
 11. The methodof claim 7, further including planarizing the first encapsulant to thesemiconductor die.
 12. The method of claim 7, wherein the firstencapsulant extends above the conductive posts.
 13. The method of claim7, wherein the first encapsulant includes a photosensitive material. 14.A semiconductor device, comprising: a prefabricated substrate includinga base plate and a plurality of conductive posts extending from the baseplate; a photosensitive material disposed over the base plate and aroundthe conductive posts; a semiconductor die disposed within an openingformed in a first surface of the photosensitive material over the baseplate of the prefabricated substrate; and an encapsulant deposited overthe semiconductor die within the opening in the photosensitive material.15. The semiconductor device of claim 14, further including aninterconnect structure formed over the first surface of thephotosensitive material.
 16. The semiconductor device of claim 14,wherein the first surface of the photosensitive material is coplanarwith a surface of the semiconductor die.
 17. The semiconductor device ofclaim 14, wherein the prefabricated substrate includes copper.
 18. Asemiconductor device, comprising: a copper substrate including a baseplate and a conductive post extending from the base plate; aphotosensitive material disposed over the base plate and around theconductive post; and a semiconductor die disposed over the base plate ofthe copper substrate and within an opening extending from a firstsurface of the photosensitive material to a second surface of thephotosensitive material opposite the first surface.
 19. Thesemiconductor device of claim 18, further including an encapsulantdeposited over the semiconductor die within the opening in thephotosensitive material.
 20. The semiconductor device of claim 18,further including an interconnect structure formed over the firstsurface of the photosensitive material.
 21. The semiconductor device ofclaim 18, wherein the first surface of the photosensitive material iscoplanar with a surface of the semiconductor die.
 22. The semiconductordevice of claim 18, wherein the photosensitive material extends abovethe conductive posts.
 23. A semiconductor device, comprising: asubstrate including a base plate and a conductive post extending fromthe base plate; a first encapsulant disposed over the base plate andaround the conductive post; and a semiconductor die disposed within anopening extending from a first surface of the first encapsulant to asecond surface of the first encapsulant opposite the first surface. 24.The semiconductor device of claim 23, further including a secondencapsulant deposited over the semiconductor die within the opening inthe first encapsulant.
 25. The semiconductor device of claim 23, furtherincluding an interconnect structure formed over a first surface of thesemiconductor die.
 26. The semiconductor device of claim 23, wherein thesurface of the first encapsulant is coplanar with a surface of thesemiconductor die.
 27. The semiconductor device of claim 23, wherein thefirst encapsulant includes a photosensitive material.
 28. Thesemiconductor device of claim 23, wherein the substrate includes copper.29. A semiconductor device, comprising: a conductive post; aphotosensitive material disposed around the conductive post; asemiconductor die disposed within an opening formed in a first surfaceof the photosensitive material; and an encapsulant deposited over thesemiconductor die.
 30. The semiconductor device of claim 29, furtherincluding a first interconnect structure formed over a first surface ofthe semiconductor die.
 31. The semiconductor device of claim 30, furtherincluding a second interconnect structure formed over a second surfaceof the semiconductor die opposite the first surface of the semiconductordie.
 32. The semiconductor device of claim 29, wherein the first surfaceof the photosensitive material is coplanar with a surface of thesemiconductor die.